Failure Analysis of GaN-Based Current-Injected Vertical-Cavity Surface-Emitting Lasers
نویسنده
چکیده
This paper investigates internal physical mechanisms that have thus far prevented current-injected InGaN/GaN verticalcavity surface-emitting lasers (VCSELs) from lasing. Advanced device simulation is applied to a realistic VCSEL design. Several obstacles to lasing are identified, including current leakage, lateral carrier non-uniformity, and selfheating during pulsed operation.
منابع مشابه
Wide Bandgap 2 Semiconductor - Based 3 Surface - Emitting Lasers : 4 Recent Progress in GaN - Based 5 Vertical Cavity Surface - Emitting 6 Lasers and GaN - / ZnO - Based 7 Polariton Lasers
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